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We report the discovery of ferroelectricity in crystalline hafnium silicon oxide. If HfO 2 based thin films, at a composition where the tetragonal phase is not yet stable, are crystallized in presence of a cap, the formation of an orthorhombic phase is observed. o-HfO 2 shows a piezoelectric response, while a polarization measurements exhibit a remanent polarization above 10 μC/cm 2 at a coercive field of 1 MV/cm, confirming this phase to be ferroelectric. Transistors fabricated with this material exhibit a permanent and switchable shift of the threshold voltage, allowing the realization of CMOS-compatible ferroelectric field effect transistors (FeFET) with sub 10 nm gate insulators for the first time.
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T. S. Böscke
Johannes Müller
D. Bräuhaus
RWTH Aachen University
NaMLab (Germany)
Fraunhofer Institute for Photonic Microsystems
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Böscke et al. (Thu,) studied this question.
www.synapsesocial.com/papers/69dbd88dc9a120f055a3cb87 — DOI: https://doi.org/10.1109/iedm.2011.6131606