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InAlAs–InP type II heterostructures grown by gas-source molecular beam epitaxy have been studied by photoluminescence. The interface recombination energy is found around 1.27–1.28 eV in the low injection limit and shifts towards higher energy when increasing the incident power. Similar results are obtained for direct (InAlAs grown on InP) and inverse (InP on InAlAs) structures.
Vignaud et al. (Mon,) studied this question.