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N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.
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Applied Physics Letters
AT&T (United States)
Alcatel Lucent (Germany)
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Haddon et al. (Mon,) studied this question.