Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I₎₍/I₎₅₅ ratio up to 10^6 and on-state current density as high as 2000 /. We estimated carrier mobility 200 cm^2/V s and scattering mean free path 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d1. 2 nm) carbon nanotube FETs with Pd contacts in on-state current density and I₎₍/I₎₅₅ ratio, but have the advantage of producing all-semiconducting devices.