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Photocapacitance studies in GaP p-n junctions have given new insight to the deep states associated with the O donor. In addition to the well-known neutral state in which O binds an electron by 0. 9 eV, a new state in which O deeply binds a second electron was discovered. The second electron is captured into a level 0. 45 eV deep, after which lattice relaxation increases the average optical-ionization energy to 2. 0 eV. The role of lattice relaxation was established by studying the temperature dependence of the photoionization of the trapped electrons. Profile measurements of the O-donor density through the depletion layer indicated a decrease in O-donor concentration from 1. 510^16 on p to 410^14 on the n side. Optical cross sections and thermal-emission rates of both electrons were measured. Both electrons were stable below 100 ^.
Kukimoto et al. (Thu,) studied this question.