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Copper-doped p-ZnO thin films (Cu:ZnO) were grown on α-Al 2O3(0 0 0 1) and 6H:SiC(0 0 0 1) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode (LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films. © 2008 IOP Publishing Ltd.
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