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We have succeeded in fabricating the mostly crystallized Si: H materials having a wide optical band gap of up to 2. 4 eV by means of a reactive sputtering technique with a low substrate temperature of 100 K. The structural analysis showed that the materials consist of small crystalline silicon particles surrounded by hydrogen atoms, whose diameters are 20--30 A. The widening of the optical band gap can be explained by a three-dimensional quantum-well effect in the small particles.
Furukawa et al. (Thu,) studied this question.