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Tunnel injection is demonstrated into the confined-particle states of an In1−xGaxP1−zAsz potential well, located on the p-type side of an InP p-n junction, leading to structure in the I-V, dI/dV, and d2I/dV2 characteristics and to step increases in the intensity of the recombination radiation at bias voltages V corresponding to the states of the well eV∼Eg(InGaPAs) ∼hνEg(InP).
Rezek et al. (Tue,) studied this question.