Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

A simple extension of the reflection high-energy electron diffraction oscillation technique to vicinal surfaces provides a means of studying surface diffusion during molecular beam epitaxial growth. The basis of the method is described and some preliminary results for Ga diffusion during the growth of GaAs films with (001) 2×4 and 3×1 reconstructed surfaces are presented.