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Charge transport in 20-30--thick Bi films is studied by scanning tunneling potentiometry at room temperature. Deposition at T=140 K onto InP-based multilayer substrates leads to flat and continuous films that are subjected to a lateral current density of up to 810^6 A/cm^2. We find that scattering at surface defects and grain boundaries gives rise to discontinuities in the local electrochemical potential. In particular, we observe dipole-shaped potential variations near small holes in the film. The influence of diffusive and ballistic transport on the formation of these dipoles is discussed.
Briner et al. (Thu,) studied this question.
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