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A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
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G. Schmidt
University of Maryland, Baltimore
Georg Richter
University of Applied Sciences Technikum Wien
P. Grabs
University of Würzburg
Physical Review Letters
University of Würzburg
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Schmidt et al. (Mon,) studied this question.
synapsesocial.com/papers/6a1d3ab11c2cbcb15c5dfa9c — DOI: https://doi.org/10.1103/physrevlett.87.227203
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