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We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant-PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351 nm (with 20%Al and 5%In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN multiple quantum wells (MQWs) heterostructures have been grown; both XRD and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.
Han et al. (2000) studied this question.