Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

Hyperfine control of the interface structure and composition between GaAs and AlAs films grown by molecular beam epitaxy has been achieved by deposition on vicinal (100) GaAs substrates. This control is demonstrated by producing (GaAs)m-(AlAs)n submonolayer (m and/or n1) superlattices over a wide temperature range. Analysis of these submonolayer superlattices by transmission electron microscopy shows that the layer growth regime is dominant and that layer nucleation is initiated preferentially at the step edges on the (100) vicinal surface. Potential applications of submonolayer superlattices including the growth of superlattice layers perpendicular to the substrate surface are described.