Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho2,3-b:2‘,3‘-fchalcogenopheno3,2-bchalcogenophenes, and Their Application to Field-Effect Transistors

A facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho2,3-b:2‘,3‘-fthieno3,2-bthiophene (DNTT) and dinaphtho2,3-b:2‘,3‘-fselenopheno3,2-bselenophene (DNSS), was established. Solution UV−vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO−LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm2 V-1 s-1, respectively.