The role of the interfacial layer in metal−semiconductor solar cells

Recent work has been reported on metal−semiconductor (Schottky barrier) solar cells in which efficiencies comparable to silicon p−n devices have been achieved. In these devices, the interfacial layer is believed to play an important role. In this discussion the nature of that role is examined. It is shown that the interfacial layer can enhance performance, and an outline for optimizing that enhancement is presented. The results are presented assuming n−type semiconductor material; however, the conclusions are equally valid for structures using p−type material.