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The memory retention and switching behavior of a metal-ferroelectric-semiconductor transistor using bismuth titanate have been investigated. The study made on p-channel transistors shows that the device has a fast switching speed and a switching threshold at a field of about 15 to 20 kV/cm. It also has a good memory retentivity. The low current OFF state is more stable than the high current ON state. The current in the ON state was found to decay logarithmically with time at long elapsed times. This is attributed to a slow trapping of holes at the ferroelectric-semiconductor interface states.
Szu‐Yuan Wu (1976) studied this question.