Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers

In this letter we report the fabrication and optical-electrical characterization of violet-blue GaN homojunction light emitting diodes. Rapid thermal annealing at 1150 °C (for 30 s) was used to activate the p-dopant species (Mg), which resulted in p-type GaN whose photoluminescence response centered around 438 nm is much stronger than that obtained from material annealed in the growth chamber at lower temperatures (700–800 °C) and a longer time (20 min).