Key points are not available for this paper at this time.
Angle-resolved ultraviolet-photoelectron spectroscopy and angle-resolved secondary-electron emission spectroscopy have been carried out for a film of single-crystalline hexagonal boron nitride (h-BN) formed on the Ni(111) surface to investigate both the valence- and conduction-band structures. The thickness of the film studied in this experiment was 1 ML. The observed electronic dispersion relations were compared with some theoretical ones reported for bulk h-BN. Among these theoretical calculations, the one by Catellani et al. Phys. Rev. B 36, 6105 (1987) is in the best agreement with the present results. We have discussed the strength of the interfacial bond and the influence of this bond upon the electronic states of the monolayer h-BN film on the basis of the observed band structures for the BN film and a film of monolayer graphite formed on Ni(111).
Nagashima et al. (1995) studied this question.