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Schottky barrier avalanche photodiodes have been fabricated in Ga1−xAlxAs1−ySby. The devices are planar and have semitransparent Au barriers. In addition, these detectors exhibit uniform photoresponse and dark current densities of ∼2.7×10−3 A/cm3 at the voltages where avalanche gains of 2 to 4 have been measured. This is the first report of avalanche gain in such a structure in the Ga1−xAlxAs1−ySby alloy system.
Chin et al. (Mon,) studied this question.
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