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InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films | Synapse

September 15, 1993Journal of Applied Physics171 citations

InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

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SNShuji Nakamura TMTakashi Mukai MSMasayuki Senoh

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Abstract

High-quality In0.22Ga0.78N/In0.06Ga0.94N superlattices were grown on GaN films with periods of 60 and 200 Å by the two-flow metalorganic chemical-vapor deposition method. The double-crystal x-ray rocking curve measurements showed satellite peaks which indicated the existence of the In0.22Ga0.78N/In0.06Ga0.94N superlattices. The quantum effects were observed through room-temperature photoluminescence (PL) measurements. These PL spectra were compared to theoretical solutions for the In0.22Ga0.78N/In0.06Ga0.94N superlattices.

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Cite This Study

Nakamura et al. (1993) studied this question.

synapsesocial.com/papers/6a73241ba177409e79a0ba95 https://doi.org/10.1063/1.354486

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