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Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. MRAM is a unique memory technology in that the module is inserted late in the manufacturing process, making MRAM highly compatible with advanced processing. The manufacturing flexibility of MRAM makes it an attractive choice for embedded and stand alone memory systems.
Durlam et al. (Tue,) studied this question.
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