Computer-controlled resist exposure in the scanning electron microscope

In modern microelectronics, complicated structures with very small dimensions must be fabricated on active-device materials. This task has been traditionally accomplished by photolithographic techniques, but electron-beam exposure of resist materials has recently been explored 1-3. Submicron electron devices have been fabricated in several laboratories, often featuring a flying-spot scanner to generate the pattern being exposed 4-7. Paper tape drives have been used for repetitive patterns 8, and computer control of the electron beam has been reported also 1, 9. The electron resist that has shown the highest resolution to date appears to be poly-(methyl methacrylate) (PMM). We have used this material in a resist form for microelectronic device fabrication, and in bulk form to determine energy dissipation profiles. The exposure is performed with a computer-controlled scanning electron microscope (CCSEM). In this paper, we describe the electron beam system briefly, discuss the processes involved in resist exposure and development, describe our exposure procedures using the CCSEM, and show results of fabricated devices and energy dissipation studies.