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It is shown that careful photoetching of n-WSe2 leads to a large improvement in its photoresponse. Conversion efficiencies in excess of 14% were obtained in polyiodide solution under simulated solar light. A significant red shift in the photocurrent spectrum is observed after photoetching as well as hexagonal etch pits which reduce the reflectivity of the surface.
Tenne et al. (Tue,) studied this question.