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The effect of nitrogen doping by the NH3 plasma treatment approach on the resistive switching properties of a HfO2-based resistive random access memory (RRAM) device is investigated. Test results demonstrate that significantly improved performances are achieved in the HfO2-based RRAM device by nitrogen doping, including low operating voltages, improved uniformity of switching parameters, satisfactory endurance and long retention characteristics. Doping by nitrogen is proposed to suppress the stochastic formation of conducting filaments in the HfO2 matrix and thus improve the performances of the Pt/Ti/HfO2/Pt device.
Xie et al. (Wed,) studied this question.