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Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Andrea Splendiani
University of California, Berkeley
L. Sun
Wuhan University
Yuanbo Zhang
Fudan University
Nano Letters
University of California, Berkeley
University of California, Davis
Lawrence Berkeley National Laboratory
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Splendiani et al. (Mon,) studied this question.
synapsesocial.com/papers/69d8ecc017a1cc0598d18db5 — DOI: https://doi.org/10.1021/nl903868w
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