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The variation of Raman spectra from Si and Sn implanted GaAs with various doses was studied. Si implanted GaAs showed one type of Raman spectra which indicates that the state is almost single crystalline with a high density of defects at a dose from 2×1012 to 1×1016 cm−2. Sn implanted GaAs showed, however, three types of Raman spectra corresponding to almost single-crystalline, amorphous, and mixed states depending on the ion doses. A model of the implanted region which includes partly crystalline and amorphous layers was proposed. The annealing behavior of the implanted region could be explained with the model.
Nakamura et al. (Sun,) studied this question.