InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range

We report the operation of strained-layer InxGa1−x As/GaAs 50- and 100-period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self-electro-optic effect devices at 1.064 μm.