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The band gap of rutile TiO2 is reduced remarkably through high-temperature annealing in hydrogen atmosphere, and the absorption of visible light of the hydrogenated-TiO2 can be enhanced. These modifications of hydrogenated-TiO2 become more evident with the increase in annealing hydrogen pressure. A defect band arises near the valence band upon hydrogenation while the conduction band remains almost unchanged, which helps for meeting the requirements for hydrogen production through water splitting. This method could be also indicative for the band gap adjustment of other oxide semiconductors.
Mo et al. (Mon,) studied this question.
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