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Layer specific illumination has merits of enhancement of resolution, widening DOF and image fitness. For dense patterns like DRAM cell, layer specific illumination is a major candidate to drive low k1 lithography. To find out the best illumination for a specific pattern, diffracted image of the pattern and the ratio of captured first order to 0th order diffracted beam should be considered. By spectrum analysis, the best illumination is obtained for simple patterns like dense lines, brick wall, and dense contacts. In this paper, the procedure of obtaining the best illumination for specific patterns is presented. Comparing general illuminations such as annular, the resultant illumination is proved to have wider DOF and enhancement of resolution. The best illumination can also be found by Monte Carlo simulation. For simple one-dimensional case, its validity is proved. From the exposure results, wide DOF and enhancement of resolution is confirmed.
Kim et al. (2003) studied this question.