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A fault model for SRAMs (static random-access memories) is presented based on physical spot defects, which are modeled as local disturbances in the layout of an SRAM. Two linear test algorithms (length 9N and 13N respectively, where N is the number of addresses) plus a data retention test are proposed that cover 100% of the faults under the fault model. The 13N test algorithm is generally applicable while the 9N algorithm can only be used in SRAMs with combinational R/W logic. A general solution is given for testing word-oriented SRAMs. The practical validity of the fault model and the two test algorithms is verified by a large number of actual wafer tests and device failure analysis.>
Dekker et al. (Mon,) studied this question.
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