Characterization of positive photoresist

This paper presents techniques for measuring a new set of parameters used to describe the image forming properties of positive photoresist 1. Exposure is described by three optical parameters, A, B, and C, through which the process is modelled. Development is described in terms of a rate relationship R(M) between the rate of removal of photoresist in the developer and the degree of exposure of the photoresist. This set of functional parameters provides a complete description of positive photoresist exposure and development, and is the basis for the theoretical process models discussed in the accompanying papers.