Key points are not available for this paper at this time.
Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristics of complementary MOS inverters. The smallest supply voltage at which these circuits will function is approximately 8kT/q. A boron ion implantation is used for adjusting MOST turn-on voltage for low-voltage circuits.
Swanson et al. (Sat,) studied this question.