What does this research mean for the field?

A 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process operates reliably, achieving an intrinsic endurance of 5.4×10^12 cycles without degradation and a 10-year data retention life at 85°C. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

November 1, 2007

Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

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Abstract

Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails.

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