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The integration of GaAs optoelectronic devices on Si VLSI is important for many high-bandwidth communication applications. In this paper we describe a novel technique for the quasi-monolithic integration of GaAs light-emitting diodes on Si substrates that utilizes fluid transport and shape differentiation for placement and orientation. GaAs light-emitting diodes fabricated into trapezoidal blocks are suspended in a carrier fluid and deposited over holes etched in Si for integration. Top-side ring contact and bottom electrical contact are fabricated on the blocks prior to integration.>
Yeh et al. (Wed,) studied this question.