Utilizing Highly Crystalline Pyroelectric Material as Functional Gate Dielectric in Organic Thin‐Film Transistors

Highly crystalline P(VDF-TrFE) materials have a large remnant polarization that causes the ID–VD curves to have no current saturation in the region where they normally would. This high crystallinity also results in a positive pyroelectricity, which is different from the conventional low response and nonlinear negative pyroelectricity. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.