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Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films were amorphous and highly transparent with transmittance in the visible region with an optical bandgap of . Spin-coated IZO TTFTs were operated in depletion mode and showed a field-effect mobility as high as , a threshold voltage of , an on/off current ratio greater than , and a subthreshold slope of .
Choi et al. (Wed,) studied this question.