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A theory is given for the forward current-voltage characteristic of the PIN diffused junction silicon diode. The theory predicts that the device should obey a simple PN diode characteristic until the current density approaches 200 amp/cm 2 . At higher currents an additional potential drop occurs across the middle region proportional to the square root of the current. A moderate amount of recombination in the middle region has little effect on the characteristic. It is shown that the middle region cannot lead to anomalous characteristics at low currents.
D. A. Kleinman (Tue,) studied this question.