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A silicon surface tunneling transistor structure, based on lateral band-to-band tunneling, is presented. The theory, fabrication, and operation of the device is described. Band-to-band tunneling is controlled by the bias on the gate of the device which modulates the width of the tunneling barrier. The operation of the device is confirmed in both experimental results and two-dimensional computer simulations. Dramatic differences in drain current are observed for different gate bias.
Reddick et al. (Mon,) studied this question.