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A high-quality Sb₂S₃ thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb₂S₃ absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb₂S₃ absorbers formed on a rough surface of dense blocking TiO₂/F-doped SnOv (bl-TiO₂/FTO) substrate. The planar ALD-Sb₂S₃ solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb₂S₃/bl-TiO₂/FTO showed significantly improved power conversion efficiency of 5.77% at 1 sun condition and narrow efficiency deviation, whereas the planar CBD-Sb₂S₃ solar cells exhibited 2.17% power conversion efficiency. The high efficiency and good reproducibility of ALD-Sb₂S₃ solar cell devices is attributed to reduced backward recombination because of the inhibition of oxide defects within ALD-Sb₂S₃ absorber and the conformal deposition of very uniform Sb₂S₃ absorbers on the blocking TiO₂ surface by ALD process.
Kim et al. (Wed,) studied this question.
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