Pulse Explorar nav.journalClub Debates Tendencias Investigadores Revistas

Inicio Explorar nav.journalClub Tendencias

⌘+K

A new three-terminal tunnel device | Synapse

August 1, 1987IEEE Electron Device Letters149 citations

A new three-terminal tunnel device

Ver artículo completo

SBS. Banerjee WRW.F. Richardson JCJim Coleman

Puntos clave

Los puntos clave no están disponibles para este artículo en este momento.

Resumen

A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.

Preguntar a la IA

Me gusta

Guardar

Compartir

Ver artículo completo

Preguntar a la IA

Me gusta

Guardar

Compartir

Ver artículo completo

Cite This Study

Banerjee et al. (1987) studied this question.

synapsesocial.com/papers/6a2d0840b3ebbc32efd0f66a https://doi.org/10.1109/edl.1987.26655