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With increasing temperature the base-emitter voltage of a transistor with a constant current decreases, while the difference in base-emitter voltages of two identical (integrated) transistors having a constant current ratio increases. From the sum of the two voltages a nearly temperature- independent output voltage is obtained if this sum equals the gap voltage of silicon. A reference voltage source of 10 V based on the principle is described. The reference part of the circuit is an integrated circuit, and thin-film resistors with a small relative temperature coefficient are used. An operational amplifier and a few resistors and capacitors complete the circuit. The source has a parabolic temperature characteristic and the temperature peak can be controlled by resistor adjustment. A change of /spl plusmn/10 K in respect of the peak temperature causes an output voltage change of -250 /spl mu/V, while a change of /spl plusmn/30 K causes a change of -2.2 mV. A long-term stability of 10 ppm/month was measured. The circuit can compete with the best available Zener diode sources, and has the added advantage that practically no selection is necessary.
K. E. Kuijk (1973) studied this question.