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In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET) arrays for applying to a single-transistor-cell-type digital memory and to a synaptic connection circuit in an artificial neural network are first introduced. Then, current status of the experimental studies on MF(MI)S (I: insulator) capacitors and FETs is presented and finally prospects of FET-type ferroelectric memory are discussed.
Hiroshi Ishiwara (Mon,) studied this question.