Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO₂-Based Solid Electrolyte

A simple self-assembling approach with only one nickel shadow mask is developed for flexible transparent thin-film transistors (TFTs) with patterned channel fabrication. An ultralow operation voltage of 1.5 V is realized due to the large specific gate capacitance (1.5 μF/cm 2 ) of the microporous SiO 2 -based solid-electrolyte dielectric. Flexible transparent indium-tin-oxide TFTs exhibit a good performance with a low subthreshold swing of 7 , respectively. Such low-voltage flexible transparent TFTs with a simple self-assembling process are promising for portable flexible transparent electronics applications.