Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

Abstract The hybrid halide perovskites combine the low-cost processing characteristics of organic materials with the performance factors of inorganic compounds. Recently the power conversion efficiencies of perovskite photovoltaic solar cells have reached a respective value of ∼20%. The charge transport properties were indirectly approximated in these compounds because of lack of available field-effect transistors (FETs). Here we report the fabrication and room-temperature operation of FETs based on the hybrid perovskites. We obtained balanced electron and hole transport with mobilities of ∼1 cm 2 /Vs. We also found that the yield, as well as the operational and environmental stability of the fabricated transistors is limited.