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Strain engineering is one of the most promising and effective routes toward continuously tuning the electronic and optic properties of materials, while thermal properties are generally believed to be insensitive to mechanical strain. In this paper, the strain-dependent thermal conductivity of monolayer silicene under uniform biaxial tension is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. Unlike the commonly believed understanding that thermal conductivity only slightly decreases with increased tensile strain for bulk materials, it is found that the thermal conductivity of silicene can increase dramatically with strain. Depending on the size, the maximum thermal conductivity of strained silicene can be a few times higher than that of the unstrained case. Such an unusual strain dependence is mainly attributed to the dramatic enhancement in the acoustic phonon lifetime. Such enhancement plausibly originates from the flattening of the buckling of the silicene structure upon stretching, which is unique for silicene as compared with other common two-dimensional materials. Our findings offer perspectives on modulating the thermal properties of low-dimensional structures for applications such as thermoelectrics, thermal circuits, and nanoelectronics.
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Han Xie
Tao Ouyang
Éric Germaneau
Physical review. B./Physical review. B
Shanghai Jiao Tong University
RWTH Aachen University
Institute for Advanced Study
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Xie et al. (Tue,) studied this question.
www.synapsesocial.com/papers/6a15ecd7665e751854d13017 — DOI: https://doi.org/10.1103/physrevb.93.075404