Key points are not available for this paper at this time.
The influences of solution flow and lateral temperature distribution on the surface morphology of the 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min -1 . The simulated results of temperature distribution showed the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method.
Fujii et al. (Tue,) studied this question.