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A novel non‐volatile organic memory device is developed based on an organic field effect transistor (OFET) with a dielectric layer of a four‐armed, star‐shaped polymer featuring a copper phthalocyanine (CuPc) core. The CuPc core unit of the star‐shaped polystyrene ( CuPc‐PS 4 ) self‐assembles to form aggregates via π–π interactions, which are isolated and dispersed in the polymer thin film. The OFET memory device employing CuPc‐PS 4 shows significant hole‐trapping characteristics with a high memory ON/OFF current ratio of 10 7 , long retention ability of over 10 4 s, and good endurance of more than 100 cycles, which is attributed to a flash‐type memory. The novel polymer design with CuPc core assemblies inside the polymer matrix is a promising candidate for nano floating gates in non‐volatile OFET memory.
Aimi et al. (Tue,) studied this question.
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