Organic Nanowire/Crystalline Siliconp–nHeterojunctions for High-Sensitivity, Broadband Photodetectors

Organic/inorganic hybrid devices are promising candidates for high-performance, low-cost optoelectronic devices, by virtue of their unique properties. Polycrystalline/amorphous organic films are widely used in hybrid devices, because defects in the films hamper the improvement of device performance. Here, we report the construction of 2,4-bis4-(N,N-dimethylamino)phenylsquaraine (SQ) nanowire (NW)/crystalline Si (c-Si) p-n heterojunctions. Thanks to the high crystal quality of the SQ NWs, the heterojunctions exhibit excellent diode characteristics in darkness. It is significant that the heterojunctions have been found to be capable of detecting broadband light with wavelengths spanning from ultraviolet (UV) light, to visible (Vis) light, to near-infrared (NIR) light, because of the complementary spectrum absorption of SQ NWs with Si. The junction is demonstrated to play a core role in enhancing the device performance, in terms of ultrahigh sensitivity, excellent stability, and fast response. The photovoltaic characteristics of the heterojunctions are further investigated, revealing a power conversion efficiency (PCE) of up to 1.17%. This result also proves the potential of the device as self-powered photodetectors operating at zero external bias voltage. This work presents an important advance in constructing single-crystal organic nanostructure/inorganic heterojunctions and will enable future exploration of their applications in broadband photodetectors and solar cells.