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This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the one-transistor-one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop for nonvolatile processor, and synaptic device for neuro-inspired computing.
Yu et al. (Fri,) studied this question.