MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

A U-shape MoS 2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS 2 deposition, thin MoS 2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.